VEMT2023SLX01 www.vishay.com vishay semiconductors rev. 1.0, 05-apr-13 1 document number: 84166 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon npn phototransistor description VEMT2023SLX01 is a silicon npn epitaxial planar phototransistor in a miniature side looking, surface mount package (smd) with dome lens and daylight blocking filter. filter bandwidth is matched with 830 nm to 950 nm ir emitters. features ? package type: surface mount ? package form: side view ? dimensions (l x w x h in mm): 2.3 x 2.55 x 2.3 ? aec-q101 qualified ? high radiant sensitivity ? daylight blocking filter matched with 830 nm to 950 nm ir emitters ? fast response times ? angle of half sensitivity: ? = 35 ? package matched with ir emitter series vsmb2943slx01 ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free re flow soldering ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? detector in automotive applications ? photo interrupters ? miniature switches ? counters ?encoders ? position sensors note ? test condition see table basic characteristics note ? moq: minimum order quantity product summary component i ca (ma) ? (deg) ? 0.5 (nm) VEMT2023SLX01 2.7 35 790 to 970 ordering information ordering code packaging remarks package form VEMT2023SLX01 tape and reel moq: 3000 pcs, 3000 pcs/reel side view
VEMT2023SLX01 www.vishay.com vishay semiconductors rev. 1.0, 05-apr-13 2 document number: 84166 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 20 v emitter collector voltage v eco 7v collector current i c 50 ma power power dissipation t amb ? 75 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21619 r thja = 250 k/w t amb - ambient temperature (c) p v - power dissipation (mw) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 20 v collector dark current v ce = 5 v, e = 0 i ceo 1 100 na collector emitte r capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 25 pf collector light current e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v i ca 1.3 2.7 4.1 ma angle of half sensitivity ? 35 deg wavelength of peak sensitivity ? p 860 nm range of spectral bandwidth ? 0.5 790 to 970 nm collector emitter sa turation voltage i c = 0.05 ma v cesat 0.4 v temperature coefficient of ica e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v tk ica 1.1 %/k
VEMT2023SLX01 www.vishay.com vishay semiconductors rev. 1.0, 05-apr-13 3 document number: 84166 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - collector dark current vs. ambient temperature fig. 3 - collector light current vs. irradiance fig. 4 - rise/fall time vs. collector current fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement fig. 7 - relative collector current vs. ambient temperature 1 10 100 1000 10 000 0 102030405060708090100 t amb - ambient temperature (c) i ce0 - collector dark current (na) i f = 0 v ce = 70 v v ce = 25 v v ce = 5 v 20594 i ca - collector light current (ma) e e - irradiance (mw/cm2) 0.1 1 10 100 0.01 0.1 1 10 v ce = 5 v, = 950 nm 0 10 20 30 40 50 60 70 80 90 100 0 250 500 750 1000 1250 1500 1750 2000 i c - collector current (a) t r /t f - rise/fall time (s) t f t r 20599 r l = 100 21574 - wavelength (nm) s( ) rel - relative spectral sensitivity 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 600 650 700 750 800 850 900 950 1000 1050 1100 0 0.4 0.2 0 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s rel - relative radiant sensitivity ? - angular displacement 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t amb - ambient temperature (c) i ca rel - relative collector current v ce = 5 v e e = 1 mw/cm 2 = 950 nm
VEMT2023SLX01 www.vishay.com vishay semiconductors rev. 1.0, 05-apr-13 4 document number: 84166 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: ? floor life: 4 weeks ? conditions: t amb < 30 c, rh < 60 % ? moisture sensitivity level 2a, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions VEMT2023SLX01 in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
VEMT2023SLX01 www.vishay.com vishay semiconductors rev. 1.0, 05-apr-13 5 document number: 84166 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tape and reel dimensions VEMT2023SLX01 in millimeters drawing-no.: 9.800-5123.01-4 i ss ue: 2; 19.02.13 s pecification s according to din technical drawing s drawing refer s to following type s : reel dimen s ion s and tape leader and tailer tape: part s mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0 . 5 label po s ted here coming out from reel tape po s ition ? 1 3 0 . 5 12.4 1.5 3000 pc s / reel lead i lead ii cathode anode collector emitter anode cathode device v s mb2943 s lx01 v s mf2893 s lx01 v s mb2948 s l vemd2023 s lx01 vemt2023 s lx01 vemt2523 s lx01 v s my2853 s l s ee table terminal po s ition in tape vemd2523 s lx01 x 2:1 12 +0.3 -0.1 ii i 1.75 0.1 5.5 0.05 2 0.05 40.1 ?1.55 0.05 8 0.1 2.85 0.1
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